SiC-based hybrid IGBT is for rugged applications
At the ON Semiconductor stand (Hall 9-330), visitors will see a hybrid IGBT and isolated high current IGBT gate driver.
The AFGHL50T65SQDC uses the latest field stop IGBT and SiC Schottky diode technology to offer low conduction and switching losses in multiple power applications, explains ON Semiconductor. Target applications are those that will benefit from reduced reverse recovery losses, such as totem pole based bridgeless power factor correction (PFC) and inverters.
The device co-packages a silicon-based IGBT with a SiC Shottky barrier diode. The high-performance device is rated for 650V operation and able to handle continuous currents up to 100A at 25 degrees C (50A at 100 degrees C) as well as pulsed currents up to 200A. For systems requiring greater current capability, a positive temperature co-efficient allows for parallel operation.
Electric vehicles (EV)s require a bi-directional charger to store energy which may be used to power the home at peak times. This bi-directional charger must have high efficiency switching to ensure that energy is not wasted during the transfer. In this use case, the IGBT with an external SiC diode is significantly more efficient than a MOSFET, says ON Semi, as there are no associated forward or reverse recovery losses.
The AFGHL50T65SQDC can operate with junction temperatures up to 175 degrees C making it suitable for the most demanding power applications, including automotive. It is fully AEC-Q101 qualified, suitable for use in onboard EV and hybrid EV (HEV) chargers.
At the show, ON Semiconductor will also be releasing a new range of isolated high current IGBT drivers. The NCD(V)57000 series (pictured) is aimed at multiple power applications including solar inverters, motor drives, uninterruptible power systems (UPS) and automotive applications such as powertrain and PTC heaters.
The NCD(V)57000 series consists of high-current single channel IGBT drivers with internal galvanic safety isolation. They have complementary inputs, open drain fault and ready outputs, an active Miller clamp, under-voltage lockout (UVLO), DESAT protection with soft turn off, negative gate voltage pin and separate high and low driver outputs for system design flexibility.
The galvanic isolation is rated at greater than 5kVrms which meets the requirements of UL1577. Working voltage is greater than 1200V and the devices guarantee 8mm creepage distance to meet reinforced safety isolation requirements.
The NCD(V)57000 IGBT drivers can source 7.8A drive current and sink 7.1A, or three times more that the capability of some competing devices, says ON Semi. They also have a greater current capability while operating in the Miller plateau.