SiC MOSFET enables higher power density in motor and inverters
The DMWS120H100SM4 N-channel SiC MOSFET addresses demand for higher efficiency and higher power density for applications such as industrial motor drives, solar inverters, data centre and telecomms power supplies, DC/DC converters and electric vehicle (EV) battery chargers, said Diodes.
The DMWS120H100SM4 operates at 1200V and drain current of up to 37A and maintains low thermal conductivity (RθJC = 0.6 degrees C per W), which makes the device suitable for applications running in harsh environments. The MOSFET has a low RDS(on) (typical) of only 80 mOhm (for a 15V gate drive) to minimise conduction losses and provide higher efficiency. The MOSFET has a gate charge of only 52nC to reduce switching losses and lower the package temperature.
According to Diodes, this is the first SiC MOSFET on the market in a TO247-4 package. The additional Kelvin sense pin can be connected to the source of the MOSFET to optimise the switching performance, enabling higher power densities.
The DMWS120H100SM4 is available now.
Diodes delivers semiconductor products to companies in the automotive, industrial, computing, consumer electronics, and communications markets. Its expanded product portfolio consists of discrete, analogue and mixed-signal products and packaging technology. It has worldwide operations in 32 sites, including engineering, testing, manufacturing, and customer service.
