SiC MOSFET serves demanding EVs and HEVs applications
High frequency, high efficiency power control applications such as electric vehicles (EVs) and hybrid electric vehicles (HEVs), data centres, and auxiliary power supplies can use the LSIC1MO170E1000 SiC MOSFET from Littelfuse.
This is the company’s first 1700V SiC MOSFET, and adds to Littelfuse’s portfolio of SiC MOSFET devices. The LSIC1MO170E1000 joins the company’s 1200V SiC MOSFETS and Schottky diodes and is designed to enable end users to benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership, says the company.
When compared to similarly-rated Si IGBTs, the LSIC1MO170E1000 SiC MOSFET increases efficiency and power density, decreases cooling requirements, and potentially lowers system level costs, to optimise system level performance.
The SiC MOSFET LSIC1MO170E1000 has a low gate charge and output capacitance, with low gate resistance for high-frequency switching. Typical applications include solar inverters, switch-mode and uninterruptible power supplies, high voltage DC/DC converters, motor drives and induction heating.
According to Michael Ketterer, global product marketing manager, power semiconductors, Semiconductor Business Unit at Littelfuse: “SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on resistance, and junction capacitances.”
The 1700V, 1 Ohm SiC MOSFETs is available in a TO-247-3L package.
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