SiGe rectifiers are AEC-Q1010-qualified for high temperature environments
PMEG silicon germanium (SiGe) rectifiers combine the best attributes of Schottky and fast recovery diodes, says Nexperia. The AEC-Q101 approved devices with 120, 150 and 200V reverse voltages have high efficiency of Schottky diodes with the thermal stability of fast recovery diodes, says the company.
The 1.0 to 3.0A SiGe rectifiers can be used in automotive, communications infrastructure and server markets and are particularly suitable for high-temperature applications like LED lighting, engine control units or fuel injection. The low leakage devices offer an extended safe-operating area with no thermal runaway up to 175 degrees for use in high efficiency designs which is not feasible using fast recovery diodes commonly used in such high-temperature designs, explains Nexperia. By boosting a low forward voltage (Vf) and low Qrr, the SiGe rectifiers have an advantage of 10 to 20 per cent lower conduction losses.
The PMEG SiGe devices (PMEGxGxELR/P) are housed in size- and thermally-efficient CFP3 and CFP5 packages that have become the industry standard for power diodes. A solid copper clip on the packages reduce thermal resistance and optimise the transfer of heat into the ambient environment, allowing small and compact PCB designs. The package allows simple pin-to-pin replacements of Schottky and fast recovery diodes when switching to SiGe technology, adds Nexperia.
The first four AEC-Q101-qualified 120 V SiGe rectifiers are in mass production today. A further eight 150 V and 200 V devices are sampling now.
Nexperia’s portfolio of semiconductor products includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analogue and logic ICs. The company is headquartered in Nijmegen, Netherlands.
Nexperia annually ships more than 90 billion products, each meeting the stringent standards set by the automotive industry, in process, size, power and performance and packages that save valuable energy and space.
