Single gate driver ICs suit EV charging stations
Single channel gate driver ICs from Infineon Technologies now include the EiceDriver 1EDC Compact 300 mil family.
The galvanically isolated drivers have an insulation test voltage of V ISO = 2500V(rms) for 60 seconds and are recognised under UL 1577. Due to their high switching frequency of up to 1,000 kHz they do not only drive IGBTs, but can also be integrated in SiC MOSFET topologies.
Infineon cites a variety of applications that benefit from these characteristics, e.g. photovoltaic string inverters, uninterruptable power supplies (UPS), EV charging stations, industrial drives, welding equipment, and commercial, construction and agricultural vehicles (CAVs).
The 1EDC Compact family provides a 300 mil wide body package for an increased creepage distance of 8.0mm leading to the UL1577 acknowledged insulation. The driver ICs feature improved thermal behaviour and can drive power devices with up to 40V output voltage. They also have a well-matched propagation delay of 120 nanoseconds (typical, max 150 nanoseconds).
They are based on Infineon’s 1200V coreless transformer technology. As a result, says Infineon, the gate drivers enable a common mode transient immunity greater than 100kV/micro seconds. The1EDC Compact can provide current drive strengths of up to 10A on separate output pins for sourcing and sinking.
The EiceDRIVER 1EDC Compact 300 mil is in production. Infineon also offers the functional isolated EiceDRIVER 1EDI Compact 150 mil and 300 mil families, which may be preferred for applications where UL certification is not required, advises the company.
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