Single photo relay reduces insertion loss for high frequency signal switching
To enhance high frequency signal transmission, Toshiba Electronics Europe has launched the TLP3475W photo relay which is specifically engineered to reduce insertion loss and suppress power attenuation of high frequency signals. The photo relay is intended for use in semiconductor testing applications including high speed memory testers, high speed logic testers or probe cards.
Toshiba said the package design has been optimised to reduce parasitic capacitance and inductance, reducing insertion loss of signals in the range 20GHz (typical) range. This represents a 1.5 times improvement in performance over the existing TLP3475S device.
The current (IFT) required to drive the LED is less than 3.0mA and on-state resistance (Ron) is typically 1.1 Ohm. The isolation voltage (BVs) exceeds 300Vrms and output capacitance is less than 20pF, which contributes to switching performance and times in the region of 2ms. There is also a normally open (NO) / 1-Form-A function.
The TLP3475W is housed in a WSON4 package measuring just 1.45 x 2.0 x 0.8mm (typical), which is 40 per cent smaller than Toshiba’s compact S-VSON4T package and makes it one of the smallest photo relays currently available, claimed Toshiba. The small size means that the photo relay is particularly suitable in multi-channel designs where multiple devices are deployed on a single card.
An operating temperature range of -40 to +110 degrees C, makes the TLP3475W suitable for a variety of industrial applications, including high speed semiconductor testing.
The TLP3475W is shipping in volume now.
About Toshiba Electronics Europe (TEE) offers European consumers and businesses a wide variety of hard disk drive (HDD) products and semiconductors for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications. The company’s portfolio encompasses power semiconductors and other discrete devices ranging from diodes to logic ICs, optical semiconductors as well as microcontrollers and application specific standard products (ASSPs).
The company also offers SCiB battery cells and modules with lithium titanium oxide (LTO) for heavy-duty applications and silicon nitride (SiN) ceramic substrates used in power semiconductor modules, inverters and converters for their heat dissipation characteristics and strength.
TEE has its headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom providing marketing, sales and logistics services.
