STMicroelectronics says AcePack 2 modules simplify SiC inverter designs
Two STPower modules that contain 1200V SiC MOSFETs in popular configurations and based on AcePack 2 package technology to ensure high power density and simplified assembly, claimed STMicroelectronics.
The A2F12M12W2-F1, is a four-pack module that provides a compact full-bridge solution for circuits such as DC/DC converters and the A2U12M12W2-F2, employs a three-level T-type topology to combine high conduction and switching efficiency with consistent output voltage.
The MOSFETs in these modules leverage ST’s second generation SiC technology, which has an RDS(on) x die area figure of merit which ensure high current handling capability with minimal losses, according to ST. Typical RDS(on) is 13 mOhm per die, which allows both full-bridge and T-type topologies to tackle high power applications and ensure energy efficiency with simplified thermal management due to low dissipation.
The AcePack 2 package has compact dimensions and ensures high power density, with an alumina substrate and direct bonded copper (DBC) die attachment. The external connections are press fit pins that simplify assembly in potentially harsh environments such as electric vehicles (EVs) and power conversion equipment for charging stations, energy storage and solar energy. The package provides 2.5kVrms insulation and contains an integrated NTC temperature sensor that can be used for system protection and diagnostics.
The A2F12M12W2-F1 four-pack and the A2U12M12W2-F2 three-level T-type inverter modules are in production now.