STMicroelectronics uses high-speed technology to boost 650V HF IGBTs
The latest IGBTs from STMicroelectronics, the HB2 650V IGBT series, deliver efficiency and performance gains for medium- and high-speed applications such as power factor correction (PFC) converters, welders, uninterruptible power supplies (UPS), and solar inverters. The IGBTs use ST’s latest Trench Field Stop (TFS) technology.
The series also includes automotive-eligible devices meeting AEC-Q101 Rev. D.
The HB2 IGBTs are claimed to have outstanding conduction performance thanks to low VCEsat of 1.55V. Dynamic behaviour is enhanced due to reduced gate charge that enables fast switching at low gate current, adds the company, and the thermal performance levels help maximise reliability and power density.
The HB2 series IGBTs can be specified with either a full-rated or half-rated diode, or a protection diode to prevent accidental reverse bias. This allows the behaviour to be optimised for specific application needs.
The first of the 650V devices, the 40A STGWA40HP65FB2, is available now in the TO-247 long-lead package.