Super junction MOSFETs are in SM packages for high density applications

Two super junction MOSFETs from Alpha and Omega Semiconductor, the 700V and 600V αMOS5 are available in surface mount DFN5x6 and DFN8x8 packages.

They are optimised for high-density, low profile and small footprint power systems and to meet to the high efficiency and high-density needs for quick charger, adapter, PC power, server, industrial power, telecommunications and hyperscale data centre applications.

The MOS5 DFN8x8 MOSFET’s footprint is only 64mm², which is 57 per cent smaller than that of D2PAK, reports Alpha and Omega Semiconductor. Its package thickness is 0.9mm, which is an 80 per cent height reduction compared with D2PAK. The lower source inductance of DFN8x8 package compared with D2PAK helps significantly reduce gate ringing and turn-on loss (Eon), says the company, and improves system reliability.

The MOS5 DFN5x6 product’s footprint is a compact 30mm², which is 61 per cent smaller than that of DPAK, confirms AOS. Package thickness is 0.75mm, a 67 per cent height reduction compared with DPAK. The DFN5x6 package’s low source inductance makes it suitable for fast switching and small form-factor PCB layout.

Additionally, the DFN8x8 version features Kelvin source connection, which improves switching performance by reducing switch-on loss through separate power and drive sources.

The first wave of DFN products will be available as one 600V device of 210mOhm in DFN8x8 (AONV210A60) and two 700V devices of 660mOhm and 1.6Ohm in DFN5x6 respectively (AONS660A70F and AONS1R6A70).

The future DFN product families will provide a much broader range of Rds(on). The DFN8x8 and DFN5x6 super junction MOSFETs also come with an MSL1 rating, meaning longer floor life and less maintenance concern.

“The launch of our DFN8x8 and DFN5x6 high voltage product families will allow us to expand application coverage on ultra-slim power supplies, from quick chargers/adapters to solar inverters and telecom rectifiers,” said Richard Zhang, director of high voltage MOSFET product line at AOS.

“Our DFN products’ superior die-to-footprint ratio and Kelvin source feature enable board space-saving and fast switching, as well as ease-of-use through lower gate oscillation,” he added.

The AONV210A60 (600V 210mOhm DFN8x8), AONS660A70F (700V 660mOhm DFN5x6) and AONS1R6A70 (700V 1.6Ohm DFN5x6) are immediately available for production quantities.

http://www.aosmd.com

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