Three-phase gate driver reduces bill of materials, says Infineon

Expanding its EiceDriver portfolio, Infineon Technologies has added the 1200V level-shift three-phase silicon on insulator (SOI) gate driver.  The  6ED2230 driver is claimed to provide leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. The drivers reduce bill of materials (BoM) and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.

The level-shift gate driver 6ED2230 provides 350mA / 650mA source and sink drive capability. Integrated dead time prevents shoot-through and the integrated over-current protection comparator with a ±5 per cent reference threshold accuracy provides fast, repeatable and reliable switch protection. The integrated bootstrap diodes offer fast reverse recovery with a very low typical resistance of 40 Ohm.

Negative VS transient voltage immunity of -100V with repeating 700ns wide pulses supports robust and reliable operation. The low and high side voltage supplies feature independent under-voltage lockout (UVLO) for safe operation. A DSO-24 footprint separates the low and high voltage on opposite sides of the package to further increase clearance and creepage.

The EiceDRIVER 6ED2230 can be ordered now in a DSO-24 300 mil package (industry-standard DSO-28 package dimensions). The package has a reduced pin-count, producing 2kV ESD rating according to human-body model (HBM).

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