Toshiba bases its automotive MOSFETs on U-MOS IX-H process

Based on the company’s U-MOS IX-H process, Toshiba’s latest automotive grade 40V N-channel power MOSFETs have improved on-resistance and reduced size.

The XPJR6604PB and XPJ1R004PB y are supplied in a new S-TOGLTM (small transistor outline gullwing leads) package. Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. A power MOSFET with high current density is therefore required due to the size constraints within automotive equipment.

The MOSFETs have a VDSS rating of 40V. The XPJR6604PB is rated for a continuous drain current (ID) of 200A (XPJ1R004PB = 160A). Both devices are rated for pulsed current (IDP) at three times this value, 600A and 480A respectively. The 200A rating is higher than that achieved by Toshiba’s 6.5mm x 9.5mm DPAK+ package.

The XPJR6604PB and XPJ1R004PB automotive MOSFETs use Toshiba’s S-TOGLTM package that measures just 7.0 x 8.44 x 2.3mm. They are post-less and feature a multi-pin structure for the source leads which significantly decreases package resistance, claimed Toshiba.

Combining the S-TOGLTM package with Toshiba’s U-MOS IX-H process gives the XPJR6604PB an on-resistance (RDS(on) value of just 0.66mOmega (XPJ1R004PB = 1.0mOmega), representing approximately 11 per cent reduction compared to Toshiba’s TO-220M(W) packaged TKR7F04PB and the mounting area has reduced by around 55 per cent while retaining the channel-to-case thermal resistance characteristics (Zth(ch-c)) – XPJR6604PB = 0.4ºC/W and XPJ1R004PB = 0.67ºC/W.

To handle the harsh environments encountered in automotive applications, the reliability of surface mount solder joints is a critical consideration. Toshiba explained that its S-TOGLTM package uses gullwing leads that reduce mounting stress, to improve solder joint reliability.

The MOSFETs are AEC-Q101 qualified and capable of operating at channel temperatures (Tch) as high as 175 degrees C.

Toshiba offers matched shipments for the devices, in which the gate threshold voltage range does not exceed 0.4V for each reel. This facilitates designs with small characteristic variations for applications requiring parallel connectivity for high-current operation.

Both MOSFETs are in mass production and shipping now.

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