Toshiba expands 80V N-channel MOSFET lineup to support 48V automotive systems
Toshiba introduces two AEC-Q101 compliant 80V N-channel MOSFETs, expanding its lineup to support 48V automotive systems. The XPH2R608QB and XPH3R908QB are the first products from the latest-generation U-MOSX-H process to be housed in the SOP Advance (WF) package with wettable flanks.
By utilising Toshiba’s U-MOSX-H process, the products achieve low on-resistance (RDS(ON)), enabling designers to maximise efficiency in their 48V systems, thereby improving performance and extending the car’s battery life. The RDS(ON) for the XPH2R608QB is 2.55mΩ (max.) with a total gate charge (Qg) of 95nC (typ.), and 3.9mΩ (max.) and 63nC (typ.) for the XPH3R908QB – both with a gate-to-source voltage (VGS) of 10V (max.).
Additionally, the SOP WF package with a copper connector structure reduces MOSFET package resistance, improving efficiency, enhancing heat dissipation, and increasing system reliability. The wettable flank design of the package enhances the visibility of solder fillets, making it easier to verify board mounting conditions using automated optical inspection (AOI) equipment, improving overall system reliability.
The XPH2R608QB and XPH3R908QB are suitable for use in N-channel type brushless DC (BLDC) motor drive and non-isolated DC-DC buck converter circuits. In addition to 28V automotive systems, other applications include motor drives, switching power supplies, and load switches. The automotive 80V U-MOSX-H series lineup also includes the XPQR8308QB, which features the high-heat-dissipation L-TOGL package. Toshiba will continue to develop automotive MOSFET products suitable for 48V systems to meet diverse customer needs and support various automotive applications.
