UnitedSiC announces 1200V Gen 4 SiC FETs
1200V SiC FETs have been introduced by UnitedSiC (now known as Qorvo) at PCIM Europe 2022.
The UF4C/SC series of 1200V Gen 4 SiC FETs are suitable for mainstream 800V bus architectures in onboard chargers for electric vehicles, industrial battery chargers, industrial power supplies, DC/DC solar inverters, advised the company. They are also suitable for welding machines, uninterruptible power supplies, and induction heating applications.
Anup Bhalla, chief engineer for power devices at UnitedSiC/Qorvo, said: “Expanding our 1200V range with higher performance Gen 4 options allows us to better serve the engineers who are moving their bus designs to 800V”. This applies to electric vehicles (EVs) for example.
The UF4C/SC SiC FETs are available with four RDS(on) classes – 23, 30, 53 and 70mOhm. All are offered in the industry standard four-lead Kelvin source TO-247 package. The 53 and 70mOhm devices are also available in the TO-247 3-lead package.
The FETs feature a silver-sinter die attach and wafer thinning process, designed for thermal performance.
All 1200V SiC FETs are included in FET-Jet Calculator. This is a free online design tool that allows for instant evaluation of efficiency, component losses and junction temperature rise of devices used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to enable optimum solutions.
The 1200V Gen 4 SiC FETs range are available now from authorised distributors.
Qorvo specialises in RF products, offering systems level expertise and global manufacturing to serve high growth segments such as wireless devices, wired and wireless networks and defence radar and communications. It also operates in emerging markets such as 5G networks, cloud computing and the IoT.
