UnitedSiC claims SiC FETs have lowest RDS(on)
Two SiC FETs from UnitedSiC, the UF3SC065030D8 and UF3SC065040D8, have the industry’s lowest RDS(on) for SiC FETs available in the low-profile DFN 8.0 x 8.0mm surface-mount package, claims the company. The 650V devices replace two standard silicon devices. Engineers can build switching circuits with greater efficiency and higher power density than is possible with a discrete design approach, adds the company.
Applications are expected to include LLC (inductor-inductor capacitor) and PSFB (phase-shifted full-bridge) power conversion at 50 to 500kHz in wireless and telecomms systems, as well as standard hard switched applications in power factor correction (PFC).
The UF3SC065030D8S is a 650V SiC FET with an RDS(on) of 34mOhm, and the UF3SC065040D8S is a 650V SiC FET with an RDS(on) of 45mOhm. According to UnitedSiC, these are the lowest RDS(on) figures for switching devices in this voltage class available in the DFN 8×8 package. Both SiC FETs have a current rating of 18A (limited by wire count in the package), and a maximum operating temperature of 150 degrees C.
The UF3SC065030D8 and UF3SC065040D8 are based around the UnitedSIC stack cascode configuration to co-package a normally-on SiC JFET with a Si MOSFET, producing a normally-off SiC FET device. The SiC FETs can be driven at 0 to 10V or 0 to 12V, and their gate-drive characteristics match those of standard Si FETs, IGBTs and SiC MOSFETs. The parts also feature a Kelvin gate return to enable cleaner drive characteristics.
The SiC FETs are pin-compatible, ‘drop-in’ improvements to other switching devices available in the DFN 8.0 x 8.0mm package. The FETs’ lower power dissipation enables switching at higher frequencies, allowing designers to achieve greater conversion efficiency and greater power density in designs where space is at a premium. The low-profile DFN surface-mount package supports a low-inductance design and low junction-to-case thermal resistance is achieved by using sintered silver die attach technology.
The UnitedSiC UF3SC065030D8S and UF3SC065040D8S have low gate charge and reverse recovery characteristics which make them suitable for switching inductive loads in any application that uses a standard gate drive. It also makes them applicable in high-frequency designs, since driver loss is minimal at switching frequencies of up to 500kHz. The FETs are robust with a low reverse recovery charge (Qrr) for hard switched operation.
All devices feature built-in ESD protection and the DFN8x8 devices are rated for MSL3.
