UnitedSiC expands UF3C Fast series SiC FETs

Two TO220-3L package options have been added to the hard-switching UF3C Fast series of 650V SiC FETs by UnitedSiC.

The UF3C065030T3S offers RDS(on) values of 30 mOhms and this figure is  80mOhm for the UF3C065080T3S. The three-leaded, industry-standard TO220-3L package has enhanced thermal characteristics via a sintered-silver packaging technology developed by UnitedSiC.

The latest SiC FETs are suitable for electric vehicle (EV) charging, photovoltaic (PV) inverters, switch mode power supplies, power factor correction modules, motor drives and induction heating.

Both SiC FETs are based on UnitedSiC’s cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate drive characteristics allows a true drop in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices on existing designs; the company says designers can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection.

The UF3C065030T3S and the UF3C065080T3S are also claimed to offer the best reverse recovery characteristics of any device of similar ratings. They are particularly suitable for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive, advices UnitedSiC.

There are now 14 devices in the UF3C Fast SiC series, spanning TO247-3L, TO247-4L, TO220-3L and D2PAK7-3L packages, with four 1200V and ten 650V options.


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