UnitedSiC says UJ3D Schottky diodes set robustness benchmark
Four junction barrier Schottky (JBS) diodes which complement UnitedSiC’s FET and JFET transistor products are claimed to have the industry’s best surge current performance.
The UJ3D devices are part of the company’s third generation of SiC Merged-PiN-Schottky (MPS) diodes. The series is made up of a 1700V 25A-rated option and three 1200V devices in 10A, 20A and 50A-rated options. The J3D1725K2, UJ3D1210K2, UJ3D1220K2 and UJ3D1250K2 have a VF x Qc figure of merit (FoM) that is at least 12 to 15 per cent better than diodes from other manufacturers can achieve, says UnitedSiC.
The SiC diodes are optimised for power system designs requiring elevated efficiency levels and fast switching speeds. The diodes are constructed with a minimum of 8.8mm clearance between the anode and the cathode which means they are better at coping with high pollution environments where voltage transients are likely to be present, explains UnitedSiC. In high current situations, the diodes’ PN junction arrangement enables the injection of additional charge carriers. This facility allows the diodes to withstand much higher surge currents than competing devices – up to 12x the rated current, says the company.
Target applications are fast-charge electric vehicle (EV) charging access points, industrial motor drives and solar energy inverters.
The SiC diodes comply with AEC-Q101 for automotive design and are supplied in compact TO247-2L package format and in die form for space constrained applications.
UnitedSiC develops silicon carbide (SiC) FET and diode power semiconductors that deliver SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecomms/server power supplies variable speed motor drives and solar PV inverters.
