Wolfspeed claims 650V SiC MOSFETs have lowest on-state resistance
Incorporating C3M SiC technology, the 15mOhm and 60mOhm 650V SiC MOSFETs have the industry’s lowest on-state resistances and switching losses, claims Wolfspeed.
Compared with silicon devices, they have half the conduction losses, 4,000 per cent lower body diode reverse-recovery charge, 75 per cent lower switching losses, enabling higher efficiencies at higher frequencies, and up to 70 per cent greater power density. They also have superior thermal performance, says Wolfspeed.
Compared with GaN on silicon, they have over half of the conduction losses and a robust gate drive and avalanche capability.
When compared with competitors’ SiC, they are claimed to offer the industry’s lowest on-resistance increase over operating temperature, low output capacitance and high switching frequency.
The 650V SiC MOSFETs are suitable for on-board chargers (OBCs) in electric vehicles (EVs), uninterruptible power supplies (UPS) and micro solar PV inverters as well as industrial switch mode power supplies (SMPS), data centres and telecomms.
The series is comprised of the 15mOhm C3M0015065D SiC MOSFET and the C3M0015065K, both with a current rating of 120A (at 25 degrees C) and in a TO-247-3 and TO-247-4 package respectively. The 60mOhm models are the C3M0060065D, C3M0060065J and C3M0060065K, with a 37A (36A for the C3M0060065J) rating at 25 degrees C and available in a TO-247-3, TO-263-7 and TO-247-4 package, respectively.
Wolfspeed is a Cree company. Its product portfolio includes SiC materials, power switching devices and RF devices targeted for applications such as electric vehicles (EVs), fast charging, inverters, power supplies, telecomms and military and aerospace.
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