Evaluation kit makes GaN designs easier, promises MinDCet

An evaluation kit, designed to allow power electronics developers to design-in GaN for 48V applications. The MDC901-EVKHB GaN-based half-bridge kit makes GaN design easier, claims power semiconductor design house, MinDCet. It is based on the MinDCet MDC901 GaN gate driver and two high-electron-mobility transistors (HEMTs), by GaN Systems, the GS61008P E-mode GaN HEMTs.

The 100V half bridge evaluation kit is used to evaluate GaN in various converter applications including, highly efficient server PoL converters, high-voltage pulsers for MEMS (e.g., ultrasound transducers, MEMS switches), high precision motor control, DC/DC converters, AC/DC converters, and Class-D audio amplifiers.

The MDC901 is a non-isolated 200V GaN gate driver with unprecedented gate drive strength exceeding 9.0A, true floating programmable regulators, integrated charge pump, bootstrap diodes and extensive diagnostics

The MDC901-EVKHB evaluation kit features a 100V input stepdown converter providing up to 30A of output current. The complete and compact power stage consists of the MDC901 in combination with two GS61008P E-mode GaN HEMTs. The evaluation board allows control of all MDC901 control IOs (internal/external deadtime control, programmable deadtime and programmable gate voltage), as well as verification of all diagnostic outputs (under-voltage detection, gate drive monitoring and temperature sensing)

The evaluation kit contains all hardware to reliably connect the board to an external power source, as well as the required fan, heat sink, wiring and connectors to guarantee measurements under safe conditions. The evaluation kit is supported by GaN Systems and available through MinDCet.

MinDCet has expertise in high voltage, power and mixed signal ASIC design, delivering tailored ICs. The in-house production testing facilities allow medium volume production of ASICs but the company’s core development activities are focused on wide-bandgap gate drivers (GaN and SiC), high-voltage (above 650V), radiation-hardened and high temperature ASICs for power control, sensing and motor driving applications.


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