GaN-on-SiC transistor boosts signal for avionics applications

Claiming to offer the industry’s power Gallium Nitride (GaN) on Silicon Carbide (SiC), Qorvo offers the QPD1025 GaN SiC RF transistor. It operates with 1.8kW at 65V and delivers the signal integrity and extended reach essential for L-band avionics and identification friend or foe (IFF) applications.

Asif Anwar, executive director of Strategy Analytics’ Strategic Technologies Practice, believes, “Qorvo’s QPD1025 transistor represents a true game changer in this segment. It offers comparable pulsed power and duty cycle performance to silicon [laterally diffused MOSFET] LDMOS and silicon bipolar devices, but with a marked improvement in efficiency. Qorvo further achieves this high power and efficiency without introducing exotic materials such as diamond into the process flow for thermal management, ensuring a solution that is cost effective.”

The high-power transistor will save customers time and money by eliminating the need to combine amplifiers to create multi-kW solutions, explains Qorvo. The QPD1025’s has better drain efficiency than LDMOS, beating it by nearly 15 percentage points of efficiency. This makes the QPD1025 suitable for IFF and avionics applications, says the company.

Qorvo has a large GaN-on-SiC portfolio, boasting products that deliver high power density, reduced size, excellent gain, high reliability and process maturity.

Engineering samples of the QPD1025 are available now.

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http://www.qorvo.com

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