Infineon meets high power density demands for solar inverters
Infineon Technologies has expanded its thin-wafer technology Trenchstop 5 IGBT with a new product family offering up to 40A 650V IGBT, co-packed with a full rated 40A diode in a surface mounting TO-263-3 (also known as D2PAK). The Trenchstop 5 IGBT in D2PAK package serves the growing demand for higher power density in power devices for automated surface mounted assembly, explains Infineon. Typical applications requiring highest power density and efficiency are solar inverters, uninterruptible power supply (UPS), battery charging, and energy storage.
The thin Trenchstop 5 technology allows higher power density in a smaller chip size, says Infineon. Compared to competing products in D2PAK, the new family offers a higher rating than any other product on the market, with other co-packed solutions delivering only 75 per cent of the power.
The high power density of the new devices enables designers to upgrade existing designs, to develop new platforms with up to 25 per cent higher power output or to reduce the quantity of power devices used in parallel and thus allowing more compact designs. The co-packed 40A in D2PAK can be considered as an alternative to D3PAK or TO-247 used for surface mounting. This supports easy soldering, leading to fast and reliable assembly.
The Trenchstop 5 650V IGBTs in D2PAK are released for high volume production. The product family comprises 15, 20 and 30A single IGBT and 15, 20, 30 and 40A IGBT co-packed with the same current freewheeling diode.
Infineon will be exhibiting at PCIM 2018 (Nuremberg 5 to 7 June) hall 9-412.
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