SiC MOSFET modules shrink industrial controls while boosting efficiency

Wide bandgap semiconductor processes have been used by Toshiba Electronics Europe to create a compact MOSFET module that can reduce the size of industrial implementation while increasing efficiency levels.

The MG800FXF2YMS3 incorporates 3300V-rated, dual -channel silicon carbide (SiC) MOSFET devices that are capable of supporting 800A currents. The high power density modules can be used in varied industrial equipment, including industrial drives and motor control equipment, the power inverters for renewable energy generation sites and the converters/inverters needed for the electric rail infrastructure.

The SiC MOSFET modules’ packaging uses a proprietary technology. The intelligent, flexible package low voltage (iXPLV) housings rely on an advanced silver sintered internal bonding technology to enable elevated degrees of operational efficiency, explained Toshiba. Channel temperatures up to 175 degrees C can be supported, and isolation is up to 6000V RMS. Turn-on and turn-off switching losses are kept to 250mJ and 240mJ respectively, with stray inductance figures of just 12nH typically expected.

Toshiba Electronics Europe (TEE) is the European electronic components business of Toshiba Electronic Devices and Storage. TEE offers European consumers and businesses a variety of hard disk drive (HDD) products and semiconductors for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications. The company’s portfolio encompasses integrated wireless ICs, power semiconductors, microcontrollers, optical semiconductors, ASSPs and discrete devices ranging from diodes to logic ICs.

TEE has headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom providing design, manufacturing, marketing and sales. 

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