Silicon Carbide FET series increases switching speeds

Silicon carbide (SiC) power semiconductors, in the UF3C FAST series are 650 and 1200V SiC FETs in a standard TO-247-3L package. They increase switching speeds and offer higher efficiency levels than UnitedSiCs existing UJC3 series.

The FETs are based on UnitedSiC’s proprietary cascode configuration and provide higher switching speeds while at the same time offering a ‘drop-in’ replacement for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts. This means system upgrades for greater performance and efficiency can be affected without requiring changes to the existing gate drive circuitry, says UnitedSiC. Turn-on losses can be reduced based on a 50 per cent reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design, notes UnitedSiC.

Applications include the full range of hard switched circuits such as active rectifiers and totem-pole PFC stages, commonly used in electric vehicle (EV) charging, telecomms rectifiers and server supplies.

Built on UnitedSiC’s Gen-3 SiC transistor technology, the UF3C FAST series integrates a faster SiC JFET and a custom-designed Si-MOSFET to produce the combination of normally-off operation, a high-performance body diode and easy gate drive of the MOSFET. Compared with other wide band-gap technologies, the SiC cascode devices support standard 12V gate drive, and have assured avalanche ratings (100 per cent production-tested).

The range includes the UF3C120040K3S (1200V / 35mΩ), UF3C065030K3S (650V / 30mΩ) and UF3C065040K3S (650V / 42mΩ).

UnitedSiC develops SiC FET and diode power semiconductors that deliver SiC efficiency and performance for EV chargers, DC/DC converters and traction drives, as well as telecomms and server power supplies, variable speed motor drives and solar photovoltaic (PV) inverters.

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