UnitedSiC bases SiC FETs on Gen 4 technology
Believed to be the only 750V SiC FETs available today, UnitedSiC has introduced four devices based on its Gen 4 SiC FET technology. According to the company, the SiC FETs enable new performance levels, based on leadership Figures of Merit (FoM), that benefit power applications across automotive, industrial charging, telecomms rectifiers, data centre power factor correction (PFC) and DC/DC conversion as well as renewable energy and energy storage.
The SiC FETs are available in 18 and 60m Ohm options and offer reduced on-resistance per unit area, and low intrinsic capacitance. In hard switching applications, the Gen 4 FETs exhibit the lowest RDS(on) x EOSS (mohm-uJ) resulting in lower turn-on and turn-off loss, says UnitedSic. In soft-switching applications, the low RDS(on) x Coss(tr) (mOhm-nF) specification provides lower conduction loss and higher frequency. The Gen 4 SiC FETs surpass today’s competitive SiC MOSFETs’ performance whether running cool (25degrees C) or hot (125 degrees C). They also offer the lowest integral diode VF with reverse recovery delivering low dead-time losses and increased efficiency.
The 750V SiC FETs have a higher VDS rating to suit 400/500V bus voltage applications, reports the company. The SiC FETs have a compatible gate drive of ±20V, 5V Vth and all devices can be driven with 0 to +12V gate voltages. This means they work with existing SiC MOSFET, Si IGBTs and Si MOSFET gate drivers.
Anup Bhalla, vice president of engineering at UnitedSiC, explains: “We will be announcing many new Gen 4 devices over the next nine months which will further improve on cost-effectiveness, heat efficiency and design headroom,” he confirmed. “This will support all sectors in overcoming the challenges of mass adoption and to accelerate innovation,” he added.
Initial introductions are the UJ4C075018K3S (18mOhm) in a TO247-3L package, the UJ4C075018K4S (18mOhm) in a TO247-4L package, the UJ4C075060K3S (60mOhm) in a TO247-3L package and the UJ4C075060K4S (60mOhm) in the TO247-4L package. They are available from authorised distributors.
UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecomms/server power supplies variable speed motor drives and solar PV inverters.
